| 摘要 |
PURPOSE:To uniformize the characteristics of the title device and to quicken the operating speed thereof by a method wherein the base of the n-p-n transistor is connected to the constant-current circuit element through a low-resistance conductor constituted of a poly-crystalline silicon film, whereon a metal silicide film is superposed, and at the same time, each injector is also connected to the constant-current circuit element through the low-resistance conductor. CONSTITUTION:The base and the collector of an n-p-n transistor are coupled to the base terminal through a polycrystalline silicon film 601a, which is brought into a state of low resistance by a metal silicide film 501, and the collector of the p-n-p transistor, which is the constant-current circuit element, is also connected to the base terminal. Moreover, each injector is also connected to an injector terminal 11 through the metal silicide film 501 on a polycrystalline silicon film 601b. By this method, an electrical difference between the collectors of the n-p-n and p-n-p transistors is eliminated. |
