PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PURPOSE:To obtain easily a low dislocation density single crystal body with a simple device by using the single crystal body of the group III-V compd. semiconductor to be pulled up as a raw material and producing the single crystal body by the pulling up method. CONSTITUTION:The pulling up device consists of a hermetic chamber 1 in which a non-oxidizing gaseous mixture composed of 90% nitrogen and about 10% hydrogen is filled. A quartz crucible 3 contg. the raw material is disposed into a heater 2 formed of carbon to a tubular type in said chamber. An InSb polycrystal body 10 as the raw material for the single crystal body of the semiconductor to be pulled up is contained in the crucible 3 and is heated and melted to about 650 deg.C by the heater 2. A seed crystal 5 cut out in the <211> orientation is then attached to an upper jig 4 for attaching the seed crystal and while the jig is rotated, the seed crystal is brought into contact with the InS melt. The InSb single crystal body 11 is pulled up and formed while the temp. and pulling up speed of the molten InSb are adequately controlled. The resultant InSb single crystal is put into the crucible 3 and is again subjected to the pulling up, by which the InSb single crystal body is obtd.