| 摘要 |
PURPOSE:To prevent the increase of the parasitic resistance of a gate electrode at a mesa stepped section, and to improve the characteristics of a semiconductor device by making film thickness on the trapezoid side surface of the gate electrode thicker than that in other sections. CONSTITUTION:In a MES.FET in which a trapezoid N type GaAs active layer 2 is formed onto a semi-insulating GaAs substrate 4 through mesa etching, the film thickness of the trapezoid side surface, that on a mesa stepped section 6a, of the active surface 2 in a gate electrode 1a for the MES.FET is made thicker than that in other sections. Accordingly, the film thickness of the mesa stepped section on the bonding pad side of the gate electrode 1a is not thinned as seen in conventional devices, thus preventing the particular increase of parasitic resistance resulting from the mesa stepped section, then improving the characteristics of the MES.FET. |
