| 摘要 |
PURPOSE:To prevent the growth of a silicon oxide on the interface between a silicon semiconductor and a molybdenum silicide film by a method wherein the activation for low resistance of a molybdenum silicide film as an electrode or a wiring is performed in the state wherein a silicon film is formed on the surface of the molybdenum silicide film. CONSTITUTION:A silicon oxide film 2 is formed by oxidizing on heating on the surface of an N type Si substrate 1, a diffusion window 3 is formed by performing a selective etching, and a thin silicon oxide film 4 is formed by oxidizing on heating. A silicon oxide film 6 is formed on the surface of the substrate 1 by performing a CVD method. A contact window 8 is formed on the layer 7 by performing a selective etching. A molybdenum silicide film 9 is formed and a silicon film 10 is formed thereon by performing a sputtering method. An electrode is formed by performing a selective plasma etching on the films 9 and 10. Then, an annealing process and a forming process are performed in nitrogen. |
