| 摘要 |
PURPOSE:To improve working efficiency of manufacturing process by embedding GaAs conductive layer and causing it to grow in the area corresponding to a contact hole at the rear side of via hole type semiconductor device and using GaAs substrate of which rear side is flattened. CONSTITUTION:A hole corresponding to a contact hole 5 is bored to a semi- insulated GaAs substrate 1 and GaAs conductive layer 12 is embedded to such hole in order to cause it to grow. Next, the surface of layer 12 is flattened. After grinding it from the side of substrate 1, an active region 11, a source electrode 2, a drain electrode 3 and a gate electrode 4 are provided. Thereafter, a source grounding contact hole 13 is formed in such a manner as reaching the layer 12 at the location of electrode 2 and moreover the electrode 2 and the layer 12 are connected by providing the source grounding contact metal 14 within the hole 13. The surface of layer 12 is covered with an ohmic metal 9 as the soldering material. |
