发明名称 High-power injection laser diode structure
摘要 A semiconductor laser device having an array of injection laser diodes with laser cavities coupled to respective inputs of an optical star coupler. The star coupler functions both as a power combiner, to provide a single high-power output, an as a device to couple the laser cavities into a single integrated lasing region, for improved coherence and divergence properties and practically no wavefront distortion.
申请公布号 US4578791(A) 申请公布日期 1986.03.25
申请号 US19820450831 申请日期 1982.12.20
申请人 TRW INC. 发明人 CHEN, BOR-UEI
分类号 G02B6/28;G02B6/42;H01S5/10;H01S5/14;H01S5/40;(IPC1-7):H01S3/05 主分类号 G02B6/28
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