| 摘要 |
PURPOSE:To reduce lattice defect of a single crystal in the stage for growing the single crystal by heating the melt of the starting material with a heater controlled with a thyristor by enclosing the melt of the starting material with a shielding tube or cylinder comprising a good electric conductor set in a variable electromagnetic field. CONSTITUTION:A quartz boat 1 contg. the melt 2 of the starting material for a compound semiconductor is placed in a shielding tube 3 comprising a good electroconductive body for shielding variable electromagnetic field in order to eliminate a thyristor noise. Both the quartz boat 1 and the shielding tube 3 are sealed together with a solid group V element in a cylindrical quartz reaction tube 4. The reaction tube 4 is then inserted into a furnace core tube 5 where it is heated with a heater 6 controlled by a thyristor to cause growth of a single crystal of a compound semicoductor. By this constitution, generation of variation of electromagnetic field in the melt of the starting material due to the noise component of electric current passing through the heater 6 is prevented by controlling with the thyristor, and generation of lattice defect is retarded. |
