| 摘要 |
PURPOSE:To improve the coupling efficiency without deteriorating the light emitting efficiency and to obtain a LED having high optical input to optical fibers, by providing an active layer whose shape is limited to a disc of a particular diameter and utilizing the whole of the disc-shaped active layer as a light emitting region. CONSTITUTION:An N type InP layer 12, an N type InGaAsP active layer 13, a P type InP layer 14, and a P type InGaAsP contact layer 41 are formed in that order on an N type InP substrate 11 by the liquid-phase epitaxy, for example. Subsequently, the active layer 13, the P type InP layer 14 and the contact layer 41 are removed by chemical etching with Br methanol or the like or by dry etching so as to leave such a circular mesa that the diameter of the active layer 13 is 25mum or less. A layer 42 of a material having high electric resistance such as high-resistance ZnSe or amorphous Si is formed around the mesa by CVD, for example. A TiPt film is formed on the surface of the contact layer 41 to provide a P type electrode 16. The substrate 11 is then ground to a thickness of about 100mum, and an AuGeNi film is formed thereon concentrically with the circular mesa and except for the region of a window 17 for taking out light of a diameter of about 100mum, so as to form an N type electrode 18. |
