| 摘要 |
PURPOSE:To enable the titled element to be formed with good reproducibility by a method wherein a conductor film is deposited on the surface of the semiconductor film at source and drain regions, and contact electrodes of source and drain are formed by isolating the conductor film by undercutting a gate electrode. CONSTITUTION:A resist pattern having the gate electrode 14 at the aperture part is formed, and an SiN film 13 is etched with a mixed solution of hydrofluoric acid with acetic acid. At this time, an SiN film under the Cr film 14 of the gate electrode 14 comes to remain. After the a-Si 12 of the source-drain regions is exposed, only the SiN film 13 under the gate electrode 14 is undercut by overetching. Next, a phosphorus-doped a-Si film is deposited, and a contact electrode 56 is formed on the gate electrode 14 by utilizing the stepwise difference and eaves at the edge of the electrode 14, and source-drain contact electrodes 15 and 16 self-aligned with the electrode 14 are formed. A Cr film and an Al film are deposited by evaporation and patterned into source electrodes 17 and 171, drain electrodes 18 and 181, and gate lead-out electrodes 141 and 142. |
