| 摘要 |
PURPOSE:To easily perform the exchange of a target material at a short time by bonding both the target material and a target holding electrode by means of low-m.p. alloy in case of fitting the target material on the electrode. CONSTITUTION:In a sputtering device having both a target holding electrode 2 and a sealding electrode 4 in a vacuum tank, in case of using an Si-wafer as a target 1, the Si-wafer is thoroughly washed with acetone and thereafter washed with HF+NH4F (1:6) liquid and furthermore washed with deionized water and dried. On the other hand, the target holding electrode 2 is thoroughly wiped with acetone or the like to obtain a clean surface, the proper amount of Ga-In alloy 3 is applied on the target 1, and the electrode 2 and these are joined by matching the coated faces. Further the electrode 2 is previously plated with Ta, W and Ti or the like and can be necessarily cooled with cooling water. Thereby the target 1 can be easily taken off from the electrode 2 when exchanging the target 1. |
