发明名称 CARBON CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL
摘要 PURPOSE:To obtain the titled carbon crucible having a long life, by providing at least part of the inner face of the carbon crucible with a tapered face, making the bottom part thicker than the opening part. CONSTITUTION:At least part of the inner face of the carbon crucible 12 for pulling up silicon single crystal is provided with a tapered face, and the bottom part is made thicker than the opening part. The angle of the tapered face from the perpendicular direction is preferably in a 5-40 deg. range. When the angle is <5 deg., the thickness of the carbon crucible can hardly changed, heat transfer to the silicon melt can not be prevented and the influence of thermal expansion of SiC can not be lessened. On the other hand, when the angle exceeds 40 deg., the area of the liquid level of the silicon melt is extremely changed with pulling operation, so temperature control of the silicon melt is not carried out with ease, and a desired temperature distribution is not obtained.
申请公布号 JPS6126593(A) 申请公布日期 1986.02.05
申请号 JP19840145850 申请日期 1984.07.13
申请人 TOSHIBA CERAMICS CO LTD 发明人 HASEBE HITOSHI;MATSUDA MASATO
分类号 C30B15/10;G11B11/10;(IPC1-7):C30B15/10 主分类号 C30B15/10
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