发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce a chip size through decreasing the number of elements and improving an integration degree by unifying on an element forming region a clamp diode and a collector resistance of a differential transistor in an ECL circuit. CONSTITUTION:A bipolar transistor constructing a differential transistor in an ECL circuit is formed in element forming regions 5b and 5c, an element unified by a collector resistance and a clamp diode is formed in an element forming region 5a. As the number of elements constructing a circuit decreases, an occupied area of an isolation region isolating elements each other can be reduced.
申请公布号 JPS6118168(A) 申请公布日期 1986.01.27
申请号 JP19840137181 申请日期 1984.07.04
申请人 HITACHI SEISAKUSHO KK 发明人 HOSOE HIDEYUKI
分类号 H01L27/04;H01L21/331;H01L21/822;H01L21/8222;H01L27/06;H01L27/07;H01L29/73;H01L29/732 主分类号 H01L27/04
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