| 摘要 |
PURPOSE:To eliminate defective insulation, and to obtain a semiconductor device containing a small-sized capacitor having high capacitance by etching a first conductor layer from a pin hole in an insulating film coating the first conductor layer formed to one part on a substrate, shaping an opening having a diameter larger than the pin hole and forming a second conductor layer. CONSTITUTION:A first conductor layer 1 is shaped selectively onto a semi-insulating substrate 100, and an insulating film 2 is applied. A pin hole 2a is formed at that time. One part of the first conductor layer just under and in the periphery of the pin hole 2a is removed through etching by an etchat 3 for the first conductor layer 1 to shape an opening 1a having a diameter larger than the pin hole 2a. A photo-resist is applied, a resist pattern 4 is formed through selective exposure and development treatment, and one part of the insulating film 2 is exposed. An opening section 2b is shaped through etching. The resist pattern 4 is removed through etching, a resist pattern 7 is shaped by using the photo-resist again, and a second conductor layer 8 is evaporated, and lifted off by a resist parting agent, thus completing the manufacture of an MIM capacitor. |
