| 摘要 |
PURPOSE:To form a figure having no missing corner on a dielectric substance separated substrate by using at least a pair of lines of intersection obtained by the second plane and the eliminated plane as a result of elimination as a part of pattern after the etching. CONSTITUTION:The edges of corrosion-proof mask material is placed in parallel to the direction [100] with the lines of intersection of the plane (100) and plane (111). As a result of anisotropic etching, two pairs of intersecting planes (111) are formed by providing a window like 27 to the corrosion-proof mask material. Four orthogonally crossing lines 23, 24, 25, 26 can be obtained by executing the cutting from the rear surface in parallel to the main surface of semiconductor. Since the high order planes are not generated between the crossing plane (111), the under-cut by etching indicated as 29 is not generated. Thereby, a pattern 31 is formed on the wafer diffusion surface obtained by turning over and high precision alignment can be executed by utilizing such region. |
