| 摘要 |
PURPOSE:To attain high speed write to a memory with slow write speed by widening the width of a write pulse in the memory as a write signal and flowing an excess write current for the time corresponding to the widened width. CONSTITUTION:A delay pulse D1 for a write pulse D is formed by a delay circuit in the memory, the pulses D, D1 are given to an AND circuit and a widened internal write pulse D2(=DXD1) is obtained. Then the write is attained with a short pulse width to the memory having a slow write speed. That is, a semiconductor storage circuit possible for high speed write is obtained. |
