| 摘要 |
PURPOSE:To possess the stripe structure with a built-in current stricture region, and to facilitate the manufacture by a method wherein a multilayer thin film including a double hereto structure is provided on a substrate, and a stripe structure for current stricture of mesa form surrounded by a material having a smaller forbidden band width than that of a material constructing active layers on both sides is formed on the multilayer thin film. CONSTITUTION:An n<+> GaAs buffer layer 19, an n type Ga1-xAlxAs clad layer 11, an undoped Ga1-yAlyAs active layer 12, a p type Ga1-zAlzAs clad layer 13, and a p type GaAs layer 16 are epitaxially grown on the substrate 10 by organic metal vapor phase epitaxial growth (MOCVD). Thereafter, etching is carried out with a photo resist left on the p type GaAs layer 16. After the surface is cleaned by removing the photo resist, crystals are grown into a high-resistant GaAs layer 15 or a Ga1-nuAlnuAs layer 15 with a smaller forbidden band width than that of the material constructing the active layer under the above-mentioned conditions, so that the ridge part may be filled sufficiently. |
