| 摘要 |
PURPOSE:To selectively form a compound film of sample and raw material gas by exposing the sample with mixture gas of gas containing element of the raw material of a thin film formed on the sample and gas containing halogen element, forming a mask, and exciting the gas by light emission. CONSTITUTION:A pattern of a thermal oxide film 52 is formed on a single crystal Si substrate 51, placed in a vacuum vessel 11, set to O2 95vol%+Cl2 5vol%, 200Torr atomosphere, and excima laser light of 2W/cm<2> at 250 deg.C of sample temperature is vertically emitted to the sample. Then, an oxide film is formed only on the exposed portion, and an element separating SiO2 film 53 is selectively formed. Thereafter, after annealed at 1,000 deg.C for 30min in N2 of 1atm., the film 52 is etched. According to this configuration, since the substrate temperature of optical oxidation reaction is 250 deg.C, being relatively low, the film 52 becomes diffused barrier, the conventional accumulating and removing steps of the Si3N4 film can be omitted to simplify the steps to remarkably reduce the manufacturing cost. |
