| 摘要 |
PURPOSE:To oscillate the laser lights in the same phase by accumulating the layers having prescribed refractive index at both side of the groove on a substrate so that the effective refractive index of the active layers become the prescribed value. CONSTITUTION:A p type Ga1-zAlzAs layer 20 (z>y) having lower refractive index than a p type Ga1-yAlyAs clad layer 13 is accumulated on an n type GaAs current blocking layer 12 of both sides of the groove formed through the blocking layer 12 on the layer 13 on a p type GaAs substrate 11. With this configuration, a p type Ga1-xAlxAs active layer 14 directly above it, where 0<=x<y of effective refractive index is lower than the refractive index on the groove, and the laser lights are oscillated in the same phase, high power mode is not generated, light loss is reduced, and a laser beam of large output is radiated in a single beam semiconductor laser array. |
