| 摘要 |
PURPOSE:To prevent a fluctuation in a polycrystallized silicon layer resistance by a process of forming a passivation film by coating partially or entirely with a CVD silicon nitriding film after forming elements pattern with the polycrystallized silicon. CONSTITUTION:A polycrystallized silicon layer 2 for a resistance pattern is formed on a semiconductor substrate 4 through an insulation layer 3, and after achieving a prescribed layer resistance value by inducing impurities, the surface of the layer 2 is covered with a CVD silicon nitriding film 5 and furthermore a plazma CVD nitriding film 1 is formed and then, an upper layer wiring 6 is formed thereon. Hydrogen generated in forming the CVD silicon nitriding film shows the same actions as the hydrogen contained in the plazma CVD nitriding film and, after forming the CVD silicon nitriding film, the layer resistance of the polycrystallized silicon has already been decreased in its value and in the stabilized region completely. Therefore, the layer resistance of the polycrystallized silicon converted with the CVD silicon nitriding film is enabled to maintain the value as the value just after the CVS silicon nitriding film is formed, and is not affected by the hydrogen inside the film in the passivation film process thereafter, subsequently the process is not changed. |
