发明名称 MANUFACTURE OF ELECTRONIC DEVICE
摘要 Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resin baked at 200 DEG C. for 30 minutes and an overlying layer including a silicon containing material such as a silicon derivative of poly(methyl methacrylate). This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.
申请公布号 JPS60229026(A) 申请公布日期 1985.11.14
申请号 JP19850040345 申请日期 1985.03.02
申请人 AMERIKAN TEREFUON ANDO TEREGURAFU CO 发明人 ERUSA REICHIMANSU;JIERARUDO SUMORINSUKII
分类号 G03F7/26;G03C5/00;G03F7/038;G03F7/075;G03F7/09;H01L21/027;H01L21/30 主分类号 G03F7/26
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