发明名称 |
MANUFACTURE OF ELECTRONIC DEVICE |
摘要 |
Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resin baked at 200 DEG C. for 30 minutes and an overlying layer including a silicon containing material such as a silicon derivative of poly(methyl methacrylate). This bilevel resist has the attributes of a trilevel resist and requires significantly less processing. |
申请公布号 |
JPS60229026(A) |
申请公布日期 |
1985.11.14 |
申请号 |
JP19850040345 |
申请日期 |
1985.03.02 |
申请人 |
AMERIKAN TEREFUON ANDO TEREGURAFU CO |
发明人 |
ERUSA REICHIMANSU;JIERARUDO SUMORINSUKII |
分类号 |
G03F7/26;G03C5/00;G03F7/038;G03F7/075;G03F7/09;H01L21/027;H01L21/30 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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