| 摘要 |
PURPOSE:To obtain a Zener diode, noises therefrom are low and which has the high degree of integration and a small secular change, by simultaneously using etching for forming an isolation groove as surface etching for shaping the Zener diode and effectively utilizing etching for forming the isolation groove even in an element forming region. CONSTITUTION:A shallow groove 51 is formed at a desired position in the surface of an N type epitaxial layer 3 shaped on a P type semiconductor substrate 1 containing an N<+> type semiconductor layer 2 formed in a desired region on the P type semiconductor substrate 1. A P<+> type semiconductor layer 61 sufficiently reaching up to the N<+> semiconductor layer 2 and an N<+> semiconductor layer 71 are shaped in a region surrounded by a P type semiconductor layer 41 in the shallow groove 51. An anode electrode 8 and a cathode electrode 9 are each formed to the surfaces of the P<+> type semiconductor layer 61 and the N<+> type semiconductor layer 71. In the structure, voltage breakdown is generated in the semiconductor on a crossing line 111 between a diffusion nose section in the upward direction of the N<+> type semiconductor layer 2 and the diffusion nose section of the P<+> type semiconductor layer 61. Accordingly, a Zener diode, noises therefrom are low and which has a small change with time, can be realized. |
