发明名称 SHORT-CIRCUITING STRUCTURE FOR THYRISTOR
摘要 PURPOSE:To improve controllability of and ensure uniformity in short-circuiting resistance and thereby facilitate the manufacturing elements by a method whereing short- circuiting holes are extensively distributed to position themselves at the crossings in a uniform-density network irrespective of the arrangement of the multiplicity of sectors constituting a three-terminal thyristor equipped with an automatic arc-suppression feature. CONSTITUTION:Between an N type medium resistance region layer 8 and anode electrode 9, a P type low resistance region layer 3 is positioned to constitute a P-N junction with the N type medium resistance region layer 8. N type short-circuiting holes are so distributed that uniformity may be ensured in the size of short-circuiting resistance per unit area between the N type medium resistance region layer 8 and the anode electrode 9. At least the portion in contact with the anode electroe 9 is constituted of an N type resistance region 12 to prevent the contact resistance there from being excessively high. The short-circuiting holes are distributed to be positioned at crossings in a uniform-density network constructed of right triangles, squares, or others. The hole dimensions and the distance D are changed to control the size of short-circuiting resistance per unit area and a higher-density arrangement of short-circuiting regions ensures uniformity in short-circuiting resistance per unit area, all of which contribute to the improvement of element characteristics.
申请公布号 JPS60226179(A) 申请公布日期 1985.11.11
申请号 JP19840083099 申请日期 1984.04.25
申请人 TOYO DENKI SEIZO KK 发明人 OOTSUBO YOSHINOBU;HIGUCHI TOSHIO
分类号 H01L29/80;H01L29/08;H01L29/74 主分类号 H01L29/80
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