发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To reduce thermal noises efficiently and to obtain high speed, by providing a metal layer, which is formed on the active region of an element through an insulating film, p type and n type semiconductor layers, which are formed on the metal layer, a metal layer formed on the semiconductor layers, and a circuit for cooling the active region, which connects said layers. CONSTITUTION:Thermal noises are mainly generated in an emitter region 3 and a base region 2. Therefore, only these regions are selectively cooled. For example, when a current is made to flow in the direction of an arrow in a circuit utilizing a Peltier effect as shown in the Figure, the interface between an n type semiconductor layer 10B and an Au layer 9 and between a p type semiconductor layer 10A and the Au layer 9 is cooled. As a result the emitter region 3 and the base region 2 are cooled. When the interface between the p and n type semiconductor layer 10A and 10B and the Au layer 9 are cooled, the upper parts of the semiconductors are heated. Since electrodes 11 also serve the role of heat radiating plates, the heat is radiated efficiently. When the element shown by the Figure is packed, the heat generated in the semiconductor can be radiated by providing a radiating means in the package.
申请公布号 JPS60224253(A) 申请公布日期 1985.11.08
申请号 JP19840079469 申请日期 1984.04.20
申请人 FUJITSU KK 发明人 TAKAOKA MATSUO
分类号 H01L29/812;H01L21/338;H01L23/38;H01L39/24 主分类号 H01L29/812
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