| 摘要 |
PURPOSE:To inhibit breaking of wire even under a mechanical strain on a substrate by intermittently applying stress to the substrate during the deposition of a film forming substance on the substrate. CONSTITUTION:A vacuum vessel 1 is evacuated, Ar is introduced, and the vessel 1 and an anode 2 are grounded. DC is supplied to a cathode 3 from a power source 4 to ionize Ar, and Al atoms sputtered from a target 6 by Ar<+> are deposited on the surface of an Si substrate 5. During this time, an actuater 8 is vertically moved by driving with an external AC magnet 9 to apply tensile stress to the surface (underside) of the Si substrate 5. The vertical movement of the actuator 9 is intermittently carried out. |
