发明名称 FORMATION OF PATTERN
摘要 PURPOSE:To form a highly accurate pattern in fewer man-hours, by etching an insulation film in a pattern region such that the corrosion is extended to some extent under the resist layer on the periphery thereof. CONSTITUTION:A resist layer 2 is formed around a pattern region of an insulation film 1 provided on a base substrate. The insulation film 1 in the pattern region is etched away such that corrosion is extended to some extent under the resist layer 1 and a corroded part 5 is formed there. Thus an end of the resist layer 2 is caused to overhang. A metallic film 4 is deposited on the insulation film 1 in the pattern region. This metallic film 4 is completely separated from a metallic film 4 deposited on the resist layer 2 due to the presence of the overhang. Accordingly, the metallic film on the resist layer 2 can be easily removed, and the pattern thus formed is free of burrs or the like.
申请公布号 JPS60218849(A) 申请公布日期 1985.11.01
申请号 JP19840074551 申请日期 1984.04.13
申请人 SHINNIHON MUSEN KK 发明人 FUNATO AKIHIRO
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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