| 摘要 |
PURPOSE:To produce the titled IC with high performance at low cost while improving withstand voltage capacity and freedom of circuit design by a method wherein, after introducing an impurity into the second semiconductor layer, the third layer is formed thereon to improve the withstand voltage capacity. CONSTITUTION:A GaAs layer 32 is grown on a semiinsulating GaAs substrate 31 by molecular beam epitaxial process and then an AlGaAs layer 35 composed of Al and Ga with ratio of around 0.3:0.7 is grown. Next the layer 35 is implanted with Si and after growing SiO2 on the AlGaAs layer 35 by CVD process, SiO2 is specifically patterned by photolithographic process and then the layer 35 is implanted with Si ion 39 utilizing SiO2 as masks 361 for ion implantation. Then any incidental grid defects are removed to perform annealing process for ion activation. Next SiO2 361 utilized as masks for implantation is removed by etching process to expose overall surface of AlGaAs layer 35. Finally e.g. a substrate 31 may be set up in an MBE device to grown nondope AlGaAs or GaAs 451 heteroepitaxially and then to form an electrode 50. |
