| 摘要 |
PURPOSE:To manufacture an asymmetrical gate, whose length is 0.5mum or less, accurately and to improve characteristics, by flattening a deep dug-in structure by a thick resin layer, providing an electric insulating layer and a thin film having charged particle-ray sensitive property thereon, thereby forming a three-layer structure. CONSTITUTION:A hole is dug in an N-GaAs layer 22 on a GaAs substrate 21 so that a thickness corresponding to the threshold voltage of a MESFET, i.e. 2mum, is made to remain from the surface. An organic resist film 23 is applied on the surface. UV light is projected on the film so as to bake the film. Thus the dug- in structure is flattened. Then an SiO2 film 24 and a PMMA resist film 25 having charged particleray sensitive property are formed and a three-layer resist structure is formed. Thereafter, gate opening parts 26 and 27 are formed. The film 23 is etched until the layer 22 is reached. An opening part 28 is overetched, and a minute pattern, from which an asymmetrical gate can be formed by a lift-off method, is formed. Then, a pattern of Al29 is formed on the surface of the groove part. |
