| 摘要 |
PURPOSE:To omit the bias power source of an FET, by inserting a light conducting cell on the source side of the FET, and applying the self-bias to the gate of the FET. CONSTITUTION:A light conducting cell PC is inserted to the side of a source S of an FET. The self-bias is applied to a gate G of the FET. Thus the FET is operated. Under the state light hnu is not inputted the cell PC, a deep bias voltage is applied to the gate G of the FET, and the FET is in the OFF state. When the light hnu is inputted, the resistance of the cell PC is decreased, the bias voltage of the gate G of the FET becomes shallow and the FET is turned ON. Thus the detected output of the light is obtained at an output terminal OUT. |
