发明名称 PLANAR MAGNETRON SPUTTERING METHOD
摘要 PURPOSE:To form a film of a uniform thickness by sputtering on a substrate of a large area by convexly curving a target toward the substrate so as to inhibit film formation on the central part of the substrate and to accelerate film formation on the peripheral part. CONSTITUTION:A prismatic pole piece 15 is placed at the center of a magnet structure so that the top of the piece 15 is projected toward a target 4' from the top of a tubular pole piece 16 placed around the piece 15. The target 4' curved convexly toward a substrate 10 on which a film is formed is set on a part where plasma is generated on the magnet structure. Sputtering is then carried out.
申请公布号 JPS60200962(A) 申请公布日期 1985.10.11
申请号 JP19840054265 申请日期 1984.03.23
申请人 HITACHI SEISAKUSHO KK 发明人 SHIMIZU TAMOTSU;TATEISHI HIDEKI
分类号 C23C14/36;C23C14/35;H01J37/34 主分类号 C23C14/36
代理机构 代理人
主权项
地址