发明名称 |
PLANAR MAGNETRON SPUTTERING METHOD |
摘要 |
PURPOSE:To form a film of a uniform thickness by sputtering on a substrate of a large area by convexly curving a target toward the substrate so as to inhibit film formation on the central part of the substrate and to accelerate film formation on the peripheral part. CONSTITUTION:A prismatic pole piece 15 is placed at the center of a magnet structure so that the top of the piece 15 is projected toward a target 4' from the top of a tubular pole piece 16 placed around the piece 15. The target 4' curved convexly toward a substrate 10 on which a film is formed is set on a part where plasma is generated on the magnet structure. Sputtering is then carried out. |
申请公布号 |
JPS60200962(A) |
申请公布日期 |
1985.10.11 |
申请号 |
JP19840054265 |
申请日期 |
1984.03.23 |
申请人 |
HITACHI SEISAKUSHO KK |
发明人 |
SHIMIZU TAMOTSU;TATEISHI HIDEKI |
分类号 |
C23C14/36;C23C14/35;H01J37/34 |
主分类号 |
C23C14/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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