| 摘要 |
PURPOSE:To provide a diffused layer in self-alignment manner, by interposing a metallic silicide pattern layer between an Si substrate and an insulating film and pressing into it in longitudinal direction along the pattern layer by means of heat treatment after diffusion and transferance. CONSTITUTION:The oxide film 22 on the P type Si substrate 21 is provided with an aperture and the MoSi thin film 23 is adhered to it. The wiring pattern 23' is formed and covered with the CVDSiO2 film 24 and open the aperture 25. The shallow N-layer 26 is produced on the surface of Si substrate 21 in contact with the pattern 23' by pressing-in and diffusing within gas including POCl3 atmosphere with 850 deg.C for 1hr followed by the same procedure in N2 at 1,000 deg.C for 20min and then P is diffused in lateral and longitudinal directions from the aperture 25. In the next step, Al wiring 27, 27' connected to the pattern 23' are attached to the aperture 25. Or the shallow P diffused layer 31 may be provided by means of the same heat treatment, providing the two-layer structured wiring of P-doped poly-Si 28, 28' and MOSi 29, 29' connected to the pattern 23' through the aperture 25 and covered by CVDSiO2 film 30. |
