| 摘要 |
PURPOSE:To improve breakdown characteristics, etc., and to ensure excellent reliability by interrupting a P-N periphery close to a graded type junction by another graded type junction or a P-N junction which can be approximated by the graded type junction. CONSTITUTION:An N<+> InP layer 12 is formed on a substrate 11 and an N type InGaAs layer 13 and an N type InGaAsP layer 14 are shaped, and an N type InP layer 15 and an N type InP layer 16 are formed. An SiO2 or Si3N4 film is shaped on the surface of a wafer, and P-InP regions 17 are formed. Be atoms are implanted to a concentric region, and P type InP regions 19 and P-N junctions 20 close to a graded type junction are obtained. Likewise, a P<+> InP region 21, a P<+>-N junction 22, an Si3N4 film 23, regions 24 and electrode materials 25 are acquired. According to the constitution, uniform breakdown characteristics determined by reverse characteristics are obtained. |
