发明名称 |
Semiconductor devices. |
摘要 |
<p>A semiconductor device comprises a base semiconductor portion and, thereon, first and second elevated semiconductor portions separated by a channel. The uppermost surface of the first elevated semiconductor portion carries a metal electrical contact layer and the uppermost of the second a dielectric layer. The surfaces defining the channel are substantially free of metal and dielectric.</p><p>The structure can be used in a ridge waveguide laser, the first elevated semiconductor portion constituting the ridge (7", 8").</p><p>Distributed feedback corrugations may be incorporated in such devices (6), or in other ridge waveguide structures.</p> |
申请公布号 |
EP0156566(A1) |
申请公布日期 |
1985.10.02 |
申请号 |
EP19850301599 |
申请日期 |
1985.03.07 |
申请人 |
BRITISH TELECOMMUNICATIONS PLC |
发明人 |
FIDDYMENT, PHILIP JOHN;WESTBROOK, LESLIE DAVID;NELSON, ANDREW WILLIAM |
分类号 |
G02B6/122;G02B6/12;H01L21/205;H01L21/306;H01L33/00;H01S5/00;H01S5/12;H01S5/22 |
主分类号 |
G02B6/122 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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