发明名称 Semiconductor devices.
摘要 <p>A semiconductor device comprises a base semiconductor portion and, thereon, first and second elevated semiconductor portions separated by a channel. The uppermost surface of the first elevated semiconductor portion carries a metal electrical contact layer and the uppermost of the second a dielectric layer. The surfaces defining the channel are substantially free of metal and dielectric.</p><p>The structure can be used in a ridge waveguide laser, the first elevated semiconductor portion constituting the ridge (7", 8").</p><p>Distributed feedback corrugations may be incorporated in such devices (6), or in other ridge waveguide structures.</p>
申请公布号 EP0156566(A1) 申请公布日期 1985.10.02
申请号 EP19850301599 申请日期 1985.03.07
申请人 BRITISH TELECOMMUNICATIONS PLC 发明人 FIDDYMENT, PHILIP JOHN;WESTBROOK, LESLIE DAVID;NELSON, ANDREW WILLIAM
分类号 G02B6/122;G02B6/12;H01L21/205;H01L21/306;H01L33/00;H01S5/00;H01S5/12;H01S5/22 主分类号 G02B6/122
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