| 摘要 |
PURPOSE:To enhance the polishing precision and to prevent asbnormal variation of a resistance value due to peeling of patterns at a polishing time by setting the control limit of the quantity of polishing to dimensions smaller than the arrangement pitch of thin film resistance elements. CONSTITUTION:Connecting parts 17a-17c which should be eliminated before polishing of individual resistance elements 12-14 and divides resistors 12a-14a of individual resistance elements 12-14 with respect to circuit are formed on an electrode conductor 17. Thus, variation of the resistance value of a thin film pattern 11 due to polishing is attained by the quantity of polishing having dimensions smaller than a pitch (p) of resistance elements 12-15, an variation of the resistance value is attained for every p/2 polishing and the control limit is set to a 1/2 order because connecting parts 17a-17c are shifted from resistance elements 12-14 by p/2, and the polishing precision is enhanced considerably. |
