| 摘要 |
PURPOSE:To facilitate the fine processing of a semiconductor element, by obtaining a predetermined pattern with dry etching means using a resist film as a mask, removing the produced thin film with plasma ashing means and then applying a resist film to form a predetermined pattern. CONSTITUTION:A P type region is formed in a part of an N type Si substrate 11, and the whole surface including the P type region is covered with an SiO2 film 12. Layered films each consisting of an Si3N4 film 13 and a resist film 14 are provided over the substrate 11 and over the P type region, respectively. Then, the substrate 11 only is covered with a resist film 16 and B ions are then implanted to form a channel stopper region 17 on the periphery of the P type region. The films 12, 13, 14 and 16 are removed. Thick field SiO2 films 18 are provided on the periphery of the substrate 11 and on the region 17, and these are connected through a thin SiO2 film. A polycrystalline Si film 19 and a resist film 20 are then provided respectively over the substrate 11 and over the P type region so that they are used as masks for forming P type source and drain regions 23 and 24 in the substrate 11. According to this construction, the films are removed with dry etching and plasma ashing. |
