| 摘要 |
PURPOSE:To reduce a leakage current between a collector and an emitter by including the steps of forming an insulating layer extending on a base region at the inside end of an element separating layer and forming an emitter region in the base region with the insulating layer as part of a mask. CONSTITUTION:An SiO2 film 28 is anisotropically etched in the thickness in the thicknesswise direction by an RIE method, thereby allowing only SiO2 films 28a, 28b of the sides of base and collector leading electrodes 11, 12 to remain. Then, the prescribed portions of SiO2 films 26a, 26b are etched to form holes 16c, 26d, and a thin polycrystalline silicon film 18 is coated by a CVD method on the overall surface. Then, n type impurity ions are implanted in high density on the entire surface in the state that a photoresist (not shown) is formed at least on a polycrystalline silicon film 18 of the portion corresponding to the hole 26c. Then, an emitter diffusion is performed to electrically activate the implanted As and to diffuse in the depthwise direction, thereby forming an n<+> type emitter region 8. Then, an aluminum film 19 is formed on the overall surface. |
