| 摘要 |
PURPOSE:To form a thin-film consisting of silicon or an silicon compound containing an impurity through a sputtering method in an atmosphere, in which the impurity is heated and evaporated, by using a target composed of silicon or the silicon compound on a substrate. CONSTITUTION:A sputtering device U having constitution in which electrodes 2 and 3 are arranged in a conductive chamber 1 is used. A substrate 4 is disposed on the electrode 2, and a target 5 consisting of silicon is arranged on the electrode 3. The state in which an inert gas such as argon gas is introduced into the conductive chamber 1 is brought. An impurity, such as phosphorus, arsenic, antimony, bismuth, boron, aluminum, gallium or indium is heated from the outside of the conductive chamber 1 from a boat 7, which is positioned in the conductive chamber 1 and houses the material 6 of the impurity, and the vapor of the impurity is obtained. High-frequency voltage acquired by using the conductive chamber 1 as a reference or a bias power supply as negative voltage is each applied to the electrodes 2 and 3. |
