| 摘要 |
PURPOSE:To suppress the dispersion of the width ratio of an IIL-coexistent linear IC and to obtain the uniform element, IC, having superior characteristics, by a method wherein N<+> type impurities are introduced in one part of the P type region, which is to be used as the base of the first region, while N<+> type impurities are selectively introduced in one part of the second region in a concentration higher than that of the N<+> type impurities introduced in the one part of the P type region of the first region. CONSTITUTION:Windows are opened on parts of the first region and the second region by performing a treatment using a photoresist, the implantation and diffusion of B ions are performed and a P type region 5, which is used as a base, is formed in the first region I , and at the same time, a P type region 6, which is used as an injector, and a P type region 7, which is used as the base of the inverse NPN transistor, are formed in the second region II. Windows are opened on an oxide film 11 formed on the surface of the substrate, parts of the P type regions of both regions of the first region I and the second region II are exposed, P is doped on the exposed parts in a low concentration and a CVD-PSG film 13 is formed on the whole surface. A part of the CVD-PSG film 13, being a part belonging to the IIL side (second region), is removed by performing an etching and a CVD-PSG film 14 doped with (P) in a higher concentration is newly formed on the whole surface. An annealing treatment is performed for diffusing phosphorus and an N<+> type region 8, which is used as an emitter, is formed on one part of the surface of the base of the first region I . |
