| 摘要 |
<p>A high power excimer laser (10), suitable for annealing semiconductor wafers, emits a pulsed output at a high repetition rate in the ultraviolet wavelength region having a uniform power output across the laser beam (130). A uniform discharge is caused beween anode (20) and cathode (22) in a first transverse gas flow passageway (18) automatically following a pulse applied to the preionisation electrodes (24). The pulses are formed by a multichannel bar gap switch (28) in a second gas flow passageway (41), which is connected to the first passageway (18) by a Blumlein network (30).</p> |
