发明名称 GROWING METHOD OF SINGLE CRYSTAL
摘要 PURPOSE:To flatten the solid and liquid interface between a crystal under growing and a molten zone, and to grow the titled single crystal having excellent optical uniformity by constituting the atmosphere of carbon dioxide when the single crystal is grown by the floating zone method using a condenser furnace. CONSTITUTION:A source of heat 2 such as a halogen lamp is arranged at one focus in a rotary ellipsoidal mirror body 1, and a sample 3 molded into the form of a rod is arranged at the other focus. One end of the sample 3 is connected to an upper rotary shaft 4, and the other end is connected to a lower rotary shaft 5 through a molten zone 6 which coincides with the focal part. A speed crystal 7 is connected to the lower rotary shaft 5. The infrared rays from the source of heat 2 is condensed in an atmosphere of gaseous carbon dioxide alone or the atmosphere consisting essentially of carbon dioxide to form the molten zone 6 of the sample 3. The seed crystal 7 connected to the molten zone 6 part and the lower rotary shaft 5 holding the seed crystal 7 are moved downward with the passage of time to grow the crystal.
申请公布号 JPS60161388(A) 申请公布日期 1985.08.23
申请号 JP19840015067 申请日期 1984.02.01
申请人 NIPPON CARLIT KK 发明人 SEKI ICHIROU;SEKIKAWA SHIYUUICHI
分类号 C30B13/00;C30B13/24 主分类号 C30B13/00
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