| 摘要 |
PURPOSE:To obtain a laser having high wavelength single phase simply by forming double hetero-structure on a substrate to which a mesa platform-shaped stripe, the midway thereof is cut, is shaped. CONSTITUTION:A mesa platform-shaped stripe, the midway thereof is cut, is formed to an N-InP substrate 1. An N-InP layer 2, an N-InGaAsP active layer 3, an N-InP layer 4, a P-InP layer 5, an N-InP layer 6 and a P-InGaAsP layer 7 are grown in an epitaxial manner, and an Au/Zn layer 8 and Au 9 are evaporated under a vacuum, thus forming a P type ohmic electrode. The substrate side of the substrate 1 is ground, and Au/Sn 10 and Au 11 are evaporated under a vacuum, thus shaping an N type ohmic electrode. The cutting section of such a wafer is cloven in proper length l1, l2, and changed into chips. Accordingly, a laser having high wavelength single phase is obtained simply. |
