发明名称 METHOD AND DEVICE FOR GRINDING SURFACE OF SEMICONDUCTOR WAFER
摘要 PURPOSE:To prevent a wafer or the like made of GaAs from causing on its ground surface a coarse and tearing phenomenon, by mounting the semiconductor wafer so that its crystal azimuth may be placed in the predetermined direction of a holding table and arranging a grinding wheel with its grinding direction in a predetermined relation to the crystal azimuth. CONSTITUTION:A semiconductor wafer W, when it is mounted onto a holding table 12 in a mounting section 30, is arranged so that a crystal azimuth of the wafer W may be placed in the predetermined direction with respect to the holding table 12 by restricting an angular position of the wafer W in relation to its crystal azimuth. In this way, a relative position between the crystal azimuth of the wafer W and its grinding direction can be specifically determined as required by substantially equalizing the grinding direction of a surface of the wafer W by each of grinding wheel assembly structures 4A-4C. And the angular position of the wafer W in relation to its crystal azimuth can be easily restricted to a specific position by mounting the wafer W in its deformed part, that is, flat part being as a reference. In such way, as a result after grinding a surface of ten sheets of wafers made of GaAs, the wafer, being ground to surface roughness of about 0.2mum, has never caused a tearing phenomenon on the ground surface.
申请公布号 JPS60155358(A) 申请公布日期 1985.08.15
申请号 JP19840008534 申请日期 1984.01.23
申请人 DEISUKO:KK 发明人 MORI TOSHIYUKI
分类号 B24B7/16;B24B37/04;B24B37/30;H01L21/304 主分类号 B24B7/16
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