| 摘要 |
PURPOSE:To contrive the improvement in gate withstand voltage by a method wherein a damage layer formed by ion implantation is provided in the neighborhood of a gate electrode. CONSTITUTION:After a GaAs layer 22 not doped with impurities is grown on a semi-insulation GaAs substrate 21, an Al0.3Ga0.7As layer 23 is grown. A metal serving as the gate electrode 28 is deposited on this epitaxial layer, and then an impurity region 24 is formed by ion implantation by using this electrode 28 as a mask. Next, a source electrode region 25 and a drain electrode region 26 are formed in continuity to the region 24, and further electrode metals 29 and 30 are formed, resulting in the production of an FET. The damage layer 41 is formed in the neighborhood of the electrode 28 by implanting protons with the electrode 28 as a mask. The self-alignment type FET thus formed can alleviate a field concentration in the neighborhood of the electrode 28 end by providing the layer 41, resulting in the improvement in gate withstand voltage. |
