| 摘要 |
PURPOSE:To enable to easily end an etching, which is performed on the protruded parts of an insulating film deposited on the surface of the Si substrate of a semiconductor device, by a method wherein impurities are introduced in the protruded parts only of the insulating film from the surface and only the rate of the etching, which is performed on the protruded parts, is quickened. CONSTITUTION:First, etching-resistant masks 23 are formed in a semiconductor substrate 21, and after that, an etching is selectively performed on the field region and a recessed part is formed. A channel stopper layer 24 of a field is formed by performing an ion-implantation using the masks 23 respectively as a mask. After then, an insulating film 25 is deposited on the whole surface of the substrate 21. Moreover, a fluid substance film 26 is formed on the insulating film 25 in such a way that the surface of the film 26 becomes nearly flat. Impurities are introduced in the protruded parts only of the insulating film 25 using the fluid substance film 26 as a mask. After that, the protruded parts 27 of the insulating film 25 are selectively removed using an etching method, by which an etching rate at a time when impurities are introduced becomes faster than that at a time when impurities are not introduced. |
