| 摘要 |
PURPOSE:To improve adhesion to various kinds of bases and to enable a fine circuit pattern high in precision to be formed by using a polymer having specified atomic groups as an essential constituent. CONSTITUTION:A polymer to be used as an essential constituent has atomic groups each represented by the formula in which R<1> and R<2> are each H or a substituent; (m), (n) are each 1-5; and X is OH or SH. Such a polymer is dissolved in a solvent, applied to a base, dried, prebaked, irradiated with radiation, such as electron beams on the applied film, developed, rinsed, and post baked to obtain a fine resist pattern high in precision. As the base to be coated with the resist, glass, Si, SiO2, Al, Cu, etc. are used, and especially high adhesion is obtained to an SiO2 wafer, etc. Since superior adhesion between such a resist material and the base can be obtained, a developing soln. does not diffuse into the interface between them, and since side etching does not occur in wet etching, resolution can be enhanced and productivity can be improved. |
