| 摘要 |
PURPOSE:To grow good crystal even on a part with difference in level of a base plating having unevenness, by irradiating simultaneously the part with molecular beam of the same element in the different directions based on the base plate. CONSTITUTION:In growing crystal on the base plate 3 of GaAs having the mesastrip 9 by using molecular beam epitaxy method, the shutter 4b of the first As cell 4a and the shutter 20b of the second As cell 20a are opened, and the base plate 3 is simultaneously irradiated with the As beams 4C and 20C. The shutters of the Be cell 5a, the Ga cell 6a, the Al cell 7a, and the Si cell 8a of necessary evaporation source are selectively opened. Consequently, both the sides of the mesastrip 9 are irradiated with As beam from one of the cells, and improved crystal of AlGaAs/GaAs system, etc. is grown. |
