| 摘要 |
PURPOSE:To diffuse and introduce an impurity uniformly into a semiconductor substrate by encapsulating the semiconductor substrate, an impurity diffusion source and carbon into a closed pipe and thermally treating the substrate, the impurity diffusion source and carbon. CONSTITUTION:A quartz vessel 5 is arranged into a sealed quartz pipe 1, and an impurity diffusion source 2 and carbon powder 6 covering the diffusion source 2 are received in the vessel 5 while a semiconductor substrate 3 is encapsulated. An impurity is diffused and treated under the conditions of heating. Since the diffusion source 2 is covered with carbon powder 6, an oxide from the diffusion source 2 is reduced by carbon active at a high temperature, thus allowing the inhibition of the effect of oxygen, which adheres on the diffusion source 2 and remains, up to an approximately negligible extent. |
