| 摘要 |
PURPOSE:To release thermal stress resulting from thermal expansion coefficient difference and obtain a high quality compound semiconductor device by forming an intermediate layer which alleviates mismatching of lattice constant between a Si substrate and III-V group compound semiconductor layer on said Si substrate. CONSTITUTION:A Ge layer 3 is laminated on a Si substrate where a SiO2 pattern 2 is formed and a GaAs layer 6 on which a GeO2 pattern 5 is formed is stacked on such Ge layer 3. A polycrystalline region is formed at the upper part 2a and periphery 2b of the SiO2 pattern 2. The polycrystalline region is also formed at the upper part 5a and periphery 5b of the GeO2 pattern 5. |
