| 摘要 |
PURPOSE:To ensure the detection and removal of inferior wafers in an early stage of manufacturing by a method wherein device characteristics are measured in a heat treatment in the H2 atmosphere immediately after the formation of an first layer metal wiring pattern in a MOS-type semiconductor device of a multilayer wiring structure. CONSTITUTION:A first layer wiring is formed in the wake of a photoetching process for contact holes, vapor depositing process for Al, and a photoetching process for an interlayer Al wiring. A heat treatment is performed in an H2 atmosphere for the measurement of device characteristics. Only good wafers are allowed to go into an interlayer insulating film building process, photoetching process for a first through-hole, second layer wiring process, third layer wiring process and a protective film forming process for wirings. The heat treatment in H2 directly after the first layer wiring forming process enables the wafers, likely to turn out to be defective in a diffusion or contact-forming process, to be removed, which means that such following processed will be free of useless work. |
