| 摘要 |
PURPOSE:To determine the composition of each layer extremely simply by a method wherein, in evaluating the composition of the titled semiconductor, the amount of etching of each layer is previously measured under the same etching conditions and for the same etching time as in evaluation, and only the end surface of the semiconductor is etched on the basis of this data. CONSTITUTION:Semiconductor layers 2, 3, and 4 are successively laminated on a GaAs substrate 1 and grown into a multilayer semiconductor 5. Nextd the semiconductor 5 is cleft at the position indicated by a one-dot chain line A, and this surface is etched with the mixed solution of H2O, H2O2, HF at 10:1:1; then, the composition of each layer 2, 3, and 4 is found out on the basis of generated etching depths. In other words, the relation between compositions expressed by (x) of Ga1-xAlAs and etching depths is previously examined under the same etching conditions; it is found out that the substrate is GaAs if (x)=0, the layer 2 is Ga0.7Al0.3As if (x)=0.3, the layer 3 is GaAs if (x)=0, and the layer 4 is Ga0.35 Al0.65As if (x)=0.65. |
