| 摘要 |
PURPOSE:To control an impurity in the vicinity of the lower section of the side surface of a gate, and to obtain a fined semiconductor device by lifting off an SiO2 film in the upper section of the gate and partially implanting ions to a substrate under the side surface of the gate from a groove reaching to the substrate formed along the side surface of the gate. CONSTITUTION:An silicon oxide film 2 is formed on an silicon substrate 1, polycrystalline silicon 3 is coated with an silicon nitride film 4, and a polycrystalline silicon gate is formed through a photoetching method. The whole surface is coated with the silicon oxide film 2, the film 2 is etched through a predetermined method, and a groove 5 after lift-off processing is shaped to the side surface of the silicon gate. The film 4 is removed, the film 2 in the upper section of the film 4 is lifted off, and P type ions are implanted from the groove 5 to form P type ions 6. The film 2 except a gate section is removed, and N type ions are implanted to shape source-drain diffusion layers 7. An impurity in the vicinity of the lower section of the side surface of the gate is controlled, and an MOS transistor is fined. |
